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June 2003
BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
D
S
Features
? 0.17 A, 100 V. R DS(ON) = 6 ? @ V GS = 10 V
R DS(ON) = 10 ? @ V GS = 4.5 V
? High density cell design for extremely low R DS(ON)
? Rugged and Reliable
? Compact industry standard SOT-23 surface mount
package
D
G
S
SOT-23
G
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
100
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1)
0.17
A
– Pulsed
0.68
P D
Maximum Power Dissipation
Derate Above 25 ° C
(Note 1)
0.36
2.8
W
mW/ ° C
T J , T STG
T L
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
? 55 to +150
300
° C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
350
° C/W
Package Marking and Ordering Information
Device Marking
SA
Device
BSS123
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2003 Fairchild Semiconductor Corporation
BSS123 Rev G(W)
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相关代理商/技术参数
BSS123_FAIRCHILD 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:
BSS123_NL 制造商:Fairchild Semiconductor Corporation 功能描述:Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
BSS123_Q 功能描述:MOSFET SOT-23 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSS123215 制造商:NXP Semiconductors 功能描述:MOSFET N CH 100V 150MA 3-SOT-23
BSS123-7 功能描述:MOSFET 100V 360mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSS1237F 制造商: 功能描述: 制造商:undefined 功能描述:
BSS123-7-F 功能描述:MOSFET 100V 360mW RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
BSS123-7-F-31 制造商:DIODES 功能描述:N-CHANNEL MOSFET / SOT-23 (LEAD FREE)